SI7998DP Datasheet, PDF (8/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si7998DP
Vishay Siliconix
New Product
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
20
V_GS = 10 V thru 4 V
60
40
V_GS = 3 V
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.008
0.007
0.006
V_GS = 4.5 V
16
T_C = - 55 °C
12
8
T_C = 25 °C
4
T_C = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2500
C_iss
2000
1500
0.005
0.004
V_GS = 10 V
0.003
0
20
40
60
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 20 A
8
V_DS = 15 V
6
V_DS = 24 V
4
2
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Gate Charge
1000
500
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 20 A
1.6
1.4
1.2
1.0 V_GS = 4.5 V
0.8
V_GS = 10 V
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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8
Document Number: 68970
S09-0269-Rev. B, 16-Feb-09