SI7998DP Datasheet, PDF (5/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

New Product
Si7998DP
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
0.025
I_D = 15 A
T_J = 150 °C
10
T_J = 25 °C
0.020
0.015
0.010
0.005
T_J = 125 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.4
0.000
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
2.2
32
2.0
I_D = 250 µA
1.8
24
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
16
8
0
0.001 0.01 0.1
1
10
100
1000
Time (s)
Single Pulse Power
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
BVDSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68970
S09-0269-Rev. B, 16-Feb-09
www.vishay.com
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