SI7998DP Datasheet, PDF (4/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si7998DP
Vishay Siliconix
New Product
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
20
50
V_GS = 10 V thru 4 V
40
30
20
V_GS = 3 V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.013
16
12
T_C = 25 °C
8
4
T_C = 125 °C
T_C = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.011
0.009
0.007
V_GS = 4.5 V
V_GS = 10 V
0.005
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 15 A
8
V_DS = 15 V
6
4
V_DS = 24 V
2
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge (nC)
Gate Charge
1200
C_iss
900
600
C_oss
300
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 15 A
1.6
1.4
1.2
1.0
0.8
V_GS = 4.5 V, 10 V
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 68970
S09-0269-Rev. B, 16-Feb-09