SI7998DP Datasheet, PDF (2/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si7998DP
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
I_D = 250 µA
I_D = 250 µA
I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 0 V, V_GS = ± 20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85 °C
V_DS = 30 V, V_GS = 0 V, T_J = 85 °C
V_DS ≥ 5 V, V_GS = 10 V
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 15 A
V_GS = 10 V, I_D = 20 A
V_GS = 4.5 V, I_D = 13 A
V_GS = 4.5 V, I_D = 18 A
V_DS = 10 V, I_D = 15 A
V_DS = 10 V, I_D = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Channel-1
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Channel-2
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS = 15 V, V_GS = 10 V, I_D = 15 A
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 20 A
Channel-1
V_DS = 15 V, V_GS = 4.5 V, I_D = 15 A
Q_gs
Channel-2
Q_gd
V_DS = 15 V, V_GS = 4.5 V, I_D = 20 A
Gate Resistance
R_g
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
28
26
- 5.6
mV/°C
-6
1.2
2.5
V
1.2
2.5
100
nA
100
1
1
µA
10
10
30
A
30
0.0076 0.0093
0.0044 0.0053
Ω
0.0103 0.0124
0.0058 0.007
45
S
71
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1100
2000
200
pF
390
90
160
17
26
32
48
8.2
13
15.3 23
nC
3.2
6.3
2.7
4.7
3.5
7
Ω
3.5
7
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Document Number: 68970
S09-0269-Rev. B, 16-Feb-09