SI5513CDC_10 Datasheet, PDF (8/16 Pages) Vishay Siliconix – N- and P-Channel 20 V (D-S) MOSFET

Si5513CDC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
2.0
V_GS = 5 V thru 3 V
6
V_GS = 2.5 V
4
2
0
0
0.30
V_GS = 2 V
V_GS = 1.5 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
0.20
V_GS = 2.5 V
0.15
0.10
V_GS = 4.5 V
0.05
0.00
0
2
4
6
8
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 2.4 A
8
6
V_DS = 10 V
V_DS = 16 V
4
1.5
1.0
0.5
0.0
0.0
450
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
360
C_iss
270
180
90
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.4
V_GS = - 4.5 V; I_D = - 2.4 A
1.2
1.0
V_GS = - 2.5 V; I_D = - 1.9 A
2
0.8
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
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8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10