SI5513CDC_10 Datasheet, PDF (6/16 Pages) Vishay Siliconix – N- and P-Channel 20 V (D-S) MOSFET

Si5513CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
6
Package Limited
4
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
1.2
2.4
0.9
1.6
0.6
0.8
0.3
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10