SI5513CDC_10 Datasheet, PDF (4/16 Pages) Vishay Siliconix – N- and P-Channel 20 V (D-S) MOSFET

Si5513CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
5
V_GS = 5 V thru 2.5 V
8
4
6
4
2
0
0
0.10
V_GS = 2 V
V_GS = 1.5 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
3
2
1
0
0.0
400
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
0.06
0.04
V_GS = 2.5 V
V_GS = 4.5 V
320
C_iss
240
160
0.02
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 4.4 A
8
6
V_DS = 10 V
V_DS = 16 V
4
80
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V; I_D = 4.4 A
1.4
1.2
V_GS = 2.5 V; I_D = 3.6 A
1.0
2
0.8
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10