SI4511DY_06 Datasheet, PDF (8/9 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 ^-4
Single Pulse
10 ^-3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 85 °C
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^-2
10 ^-1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72223.
www.vishay.com
8
Document Number: 72223
S-61005-Rev. D, 12-Jun-06