SI4511DY_06 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
40
0.05
0.04
10
T_J = 150 °C
0.03
T_J = 25 °C
0.02
0.01
I_D = 3 A
I_D = 9.6 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J − Temperature (°C)
Threshold Voltage
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
10 ^-2
10 ^-1
1
10
100
600
Time (sec)
Single Pulse Power
100
r_DS(on) Limited
10
I_DM Limited
P(t) = 0.0001
P(t) = 0.001
1
I_D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
T_C = 25 °C
Single Pulse
BV_DSS Limited
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
Safe Operating Area
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4
Document Number: 72223
S-61005-Rev. D, 12-Jun-06