SI4511DY_06 Datasheet, PDF (6/9 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
40
40
V_GS = 5 thru 3.5 V
3V
32
32
T_C = - 55 °C
25 °C
24
2.5 V
24
125 °C
16
8
0
0.0
0.10
2V
1.5 V
0.4
0.8
1.2
1.6
2.0
V_DS − Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.06
V_GS = 2.5 V
0.04
0.02
V_GS = 4.5 V
0.00
0
8
16
24
32
40
I_D − Drain Current (A)
On-Resistance vs. Drain Current
5
V_DS = 10 V
I_D = 6.2 A
4
16
8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS − Gate-to-Source Voltage (V)
Transfer Characteristics
3000
2500
C_iss
2000
1500
1000
C_oss
500
C_rss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 6.2 A
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
18
Q_g − Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J − Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 72223
S-61005-Rev. D, 12-Jun-06