SI4511DY_06 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
N-Channel
20
0.0145 at V_GS = 10 V
0.017 at V_GS = 4.5 V
P-Channel
- 20
0.033 at V_GS = - 4.5 V
0.050 at V_GS = - 2.5 V
I_D (A)
9.6
8.6
- 6.2
-5
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Level Shift
• Load Switch
Pb-free
Available
RoHS*
COMPLIANT
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4511DY-T1
Si4511DY-T1-E3 (Lead (Pb)-Free)
D₁
G₁
S₁
S₂
G₂
D₂
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady
10 secs
Steady
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^{a, b}
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
± 16
- 20
± 12
V
9.6
7.2
- 6.2
- 4.6
7.7
5.8
40
- 4.9
- 3.7
A
- 40
1.7
0.9
- 1.7
0.9
2
1.1
2
1.1
W
1.3
0.7
1.3
0.7
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. t ≤ 10 sec
t ≤ 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
50
62.5
85
110
30
40
P-Channel
Typ
Max
50
62.5
90
110
30
35
Unit
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72223
S-61005-Rev. D, 12-Jun-06
www.vishay.com
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