VS-VSK170PBF Datasheet, PDF (7/13 Pages) Vishay Siliconix – SCR/SCR and SCR/Diode

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VS-VSK.170PbF, VS-VSK.250PbF Series
Vishay Semiconductors
7500
7000
6500
6000
At Any Rated Load Condition And With
Rated V_RRM Applied Following Surge.
Initial T_J = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
5500
5000
4500
4000 VSK.250.. Series
Per Junction
3500
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
9000
8000
7000
6000
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial T_J = 130°C
No Voltage Reapplied
Rated V_RRM Reapplied
5000
4000
VSK.250.. Series
Per Junction
3000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
700
600
500
Conduction angle
400
180°
120°
90°
60°
30°
300
0.12 _{K/ W}
0.16 _{K/ W}
0.20 _{K/ W}
0.25 _{K/ W}
0.3 _{K/ W}
200
100
0
0
VSK.250.. Series
Per Module
T_J = 130°C
100 200 300 400 500 600 20 40 60 80 100 120
Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
1400
1200
1000
800
600
400
200
0
0
180°
(Sine)
180°
(Rect)
2 x VSK.250.. Series
Single Phase Bridge
Connected
T_J = 130°C
0.05
0.04
K/ _W
K/
W
0.06 _{K/ W}
0.1 _{K/ W}
0.12 _{K/ W}
0.16 _{K/ W}
0.3 _{K/ W}
100 200 300 400 500 20 40 60 80 100 120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
Revision: 17-Jul-14
7
Document Number: 94417
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