VS-VSK170PBF Datasheet, PDF (5/13 Pages) Vishay Siliconix – SCR/SCR and SCR/Diode

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VS-VSK.170PbF, VS-VSK.250PbF Series
Vishay Semiconductors
5000
4500
4000
At Any Rated Load Condition And With
Rated V_RRM Applied Following Surge.
Initial T_J = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3500
3000
2500
VSK.170.. Series
Per Junction
2000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
5000
4500
4000
3500
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial T_J = 130°C
No Voltage Reapplied
Rated V_RRM Reapplied
3000
2500
VSK.170.. Series
Per Junction
2000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
400
180°
350
120°
90°
300
60°
30°
250
200 _{Conduction Angle}
150
0.25 ^0.2 K/ _W
0.3
K/
K/
W
W
0.35 _K/W
100
50
0
0
VSK.170.. Series
Per Module
T_J = 130°C
50 100 150 200 250 300 350 400 20 40 60 80 100 120
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
180°
(Sine)
180°
(Rect)
2 x VSK.170.. Series
Single Phase Bridge
Connected
T_J = 130°C
0.1
0.08
K/ _W
K/
W
0.01.612K/KW/ ^W
0.2 _{K/ W}
0.25 _{K/ W}
0.35 _{K/ W}
50 100 150 200 250 300 3050 20 40 60 80 100 120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Revision: 17-Jul-14
5
Document Number: 94417
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