 English |
|
|
|
|
|
|
|
| VS-VSK170PBF Datasheet, PDF (2/13 Pages) Vishay Siliconix – SCR/SCR and SCR/Diode | |||
| |||
| ◁ |
www.vishay.com
VS-VSK.170PbF, VS-VSK.250PbF Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
10
VS-VSK.170-
12
14
16
04
08
10
12
VS-VSK.250-
14
16
18
20
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
400
800
1000
1200
1400
1600
400
800
1000
1200
1400
1600
1800
2000
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
500
900
1100
1300
1500
1700
1900
2100
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
50
50
60
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle on-state
non-repetitive, surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2ât for fusing
I2ât
Low level value or threshold voltage
VT(TO)1
High level value of threshold voltage
VT(TO)2
Low level value on-state slope resistance
rt1
High level value on-state slope resistance rt2
Maximum on-state voltage drop
VTM
Maximum holding current
IH
Maximum latching current
IL
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x Ï x IT(AV) < I < Ï x IT(AV)),
TJ = TJ maximum
(I > Ï x IT(AV)), TJ = TJ maximum
(16.7 % x Ï x IT(AV) < I < Ï x IT(AV)),
TJ = TJ maximum
(I > Ï x IT(AV)), TJ = TJ maximum
ITM = Ï x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 μs, TJ = 25 °C
VSK.170 VSK.250 UNITS
170
250
A
85
85
°C
377
555
5100
8500
5350
8900
A
4300
7150
4500
7500
131
361
119
330
kA2s
92.5
255
84.4
233
1310
3610 kA2âs
0.89
0.97
V
1.12
1.00
1.34
0.60
mΩ
0.96
0.57
1.60
1.44
V
500
500
mA
1000
1000
Revision: 17-Jul-14
2
Document Number: 94417
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese