VS-ST083S04 Datasheet, PDF (7/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

www.vishay.com
VS-ST083SP Series
Vishay Semiconductors
10 000
20 joules per pulse
1000
0.5 ^{1 2 3}
0.3
0.2
5 10
0.1
100
ST083S Series
Sinusoidal pulse
t_p
10
10
100
1000
Pulse Basewidth (µs)
10 000
10 000
1000
100
ST083S Series
Rectangular pulse
t_{p dI/dt = 50 A/µs}
20 joules
per pulse
4 ^7.5
2
1
0.5
0.3
0.2
0.1
10
10
100
1000
Pulse Basewidth (µs)
10 000
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t_r ≤ 1 µs
b) Recommended load line for
10
≤ 30 % rated dI/dt: 10 V, 10 Ω
t_r ≤ 1 µs
(a)
(b)
(1) P_GM = 10 W, t_p = 20 ms
(2) P_GM = 20 W, t_p = 10 ms
(3) P_GM = 40 W, t_p = 5 ms
(4) P_GM = 60 W, t_p = 3.3 ms
1
0.1
0.001
V_GD
I_GD
0.01
(1) (2) (3) (4)
Device: ST083S Series
Frequency limited by P_G(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Revision: 26-Mar-14
7
Document Number: 94334
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000