VS-ST083S04 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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VS-ST083SP Series
Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of off-state voltage dV/dt
Maximum peak reverse and 
off-state leakage current
I_RRM,
I_DRM
TEST CONDITIONS
T_J = T_J maximum, linear to 80 % V_DRM, 
higher value available on request
T_J = T_J maximum, rated V_DRM/V_RRM applied
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P_GM
P_G(AV)
I_GM
+V_GM
-V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
T_J = 25 °C, V_A = 12 V, R_a = 6 
T_J = T_J maximum, rated V_DRM/V_RRM applied
VALUES
500
30
UNITS
V/μs
mA
VALUES
40
5
5
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
T_J
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
°C
-40 to 150
0.195
K/W
0.08
15.5
(137)
14
(120)
N·m
(lbf · in)
130
g
TO-209AC (TO-94)
R_thJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.034
0.025
120°
0.041
0.042
90°
0.052
60°
0.076
0.056
0.079
T_J = T_J maximum
K/W
30°
0.126
0.127
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
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Revision: 26-Mar-14
3
Document Number: 94334
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