VS-ST083S04 Datasheet, PDF (5/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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2200
2000
1800
At any rated load condition and with
rated V_RRM applied following surge
Initial T_J = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1600
1400
1200
ST083S Series
1000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
VS-ST083SP Series
Vishay Semiconductors
1
Steady state value
R_thJC = 0.195 K/W
(DC operation)
0.1
ST083S Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z_thJC Characteristic
2600
2400
2200
2000
1800
Maximum non repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
Initial T_J = 125 °C
No voltage reapplied
Rated V_RRM reapplied
1600
1400
1200 ST083S Series
1000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
160
ST083S Series
140 _{TJ = 125 °C}
120
100
80
I_TM = 500 A
I_TM = 300 A
I_TM = 200 A
I_TM = 100 A
60
I_TM = 50 A
40
20
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics
10 000
1000
T_J = 25 °C
T_J = 125 °C
ST083S Series
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
120
110
I_TM = 500 A
100
I_TM = 300 A
90
I_TM = 200 A
80
I_TM = 100 A
70
60
50
I_TM = 50 A
40
ST083S Series
30
T_J = 125 °C
20
10
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 26-Mar-14
5
Document Number: 94334
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