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| VS-ST083S04 Datasheet, PDF (2/11 Pages) Vishay Siliconix – Inverter Grade Thyristors | |||
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www.vishay.com
VS-ST083SP Series
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ITM
180° el
210
120
200
120
150
80
70
25
50
50
VDRM
50
50
60
85
22/0.15
ITM
180° el
330
270
350
210
320
190
220
85
50
50
VDRM
-
-
60
85
22/0.15
ITM
100 μs
2540
1930
1190
810
630
400
250
100
50
50
VDRM
-
-
60
85
22/0.15
UNITS
A
V
A/μs
°C
W/μF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current at ï
case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I2ït
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
VALUES
85
180° conduction, half sine wave
85
DC at 77 °C case temperature
135
t = 10 ms
t = 8.3 ms
No voltage
reapplied
2450
2560
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
2060
2160
30
27
t = 10 ms 100 % VRRM
21
t = 8.3 ms reapplied
19
t = 0.1 ms to 10 ms, no voltage reapplied
300
ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 ï, IG = 1 A
2.15
1.46
1.52
2.32
2.34
600
1000
UNITS
A
°C
A
kA2s
kA2ïs
V
mï
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise ï
of turned on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
TJ = TJ max., VDRM = Rated VDRM, ITM = 2 x dI/dt
TJ = 25 °C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 μsï
Resistive load, gate pulse: 10 V, 5 ï source
TJ = TJ maximum, ITM = 100 A, ï
commutating dI/dt = 10 A/μsï
VR = 50 V, tp = 200 μs, dV/dt = 200 V/μs
VALUES
UNITS
MIN. MAX.
1000
A/μs
0.80
μs
10 20
Revision: 26-Mar-14
2
Document Number: 94334
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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