TCET1110_07 Datasheet, PDF (7/11 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated

TCET1110/TCET1110G
Optocoupler, Phototransistor Output, _{Vishay Semiconductors}
High Temperature, 110 °C Rated
TYPICAL CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
300
Coupled Device
250
200
Phototransistor
150
IR–Diode
100
50
0
0 20 40 60 80 100 120
16736
T - Ambient Temperature (°C)
amb
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
10000
1000
100
V_CE = 30 V
10 V
10
1
0
16738
20 40 60 80 100 120
T_amb - Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
1000
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
V_F - Forward Voltage (V)
Fig. 7 - Forward Current vs. Forward Voltage
100
V_CE = 5 V
10
1
0.1
0.01
0.1
1
10
100
95 11027
I_F - Forward Current (mA)
Fig. 10 - Collector Current vs. Forward Current
1.20
1.00
0.80
0.60
V_CE = 5 V
I_F = 5 mA
0.40
0.20
0.00
- 40 - 20 0 20 40 60 80 100 120
16737
T - Ambient Temperature (°C)
amb
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
100
20 mA
I_F = 50 mA
10
10 mA
5 mA
1
2 mA
1 mA
0.1
0.1
1
10
100
95 10985 V_CE - Collector Emitter Voltage (V)
Fig. 11 - Collector Current vs. Collector Emitter Voltage
Document Number: 83546
Rev. 1.8, 21-Nov-07
For technical questions, contact: [e-mail]
www.vishay.com
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