TCET1110_07 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated

TCET1110/TCET1110G
Vishay Semiconductors ^{Optocoupler, Phototransistor Output,}
High Temperature, 110 °C Rated
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Junction capacitance
OUTPUT
I_F = 50 mA
V_F
V_R = 0, f = 1 MHz
C_j
1.25
1.6
V
50
pF
Collector emitter voltage
I_C = 1 mA
V_CEO
70
Emitter collector voltage
I_E = 100 µA
V_ECO
7
Collector emitter cut-off current
V_CE = 20 V, I_f = 0, E = 0
I_CEO
COUPLER
V
V
10
100
nA
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
I_F = 10 mA, I_C = 1 mA
V_CE = 5 V, I_F = 10 mA,
R_L = 100 Ω
f = 1 MHz
V_CEsat
f_c
C_k
0.3
V
110
kHz
0.3
pF
Note
T_amb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
V_CE = 5 V, I_F = 1 mA
I_C/I_F
V_CE = 5 V, I_F = 5 mA
V_CE = 5 V, I_F = 10 mA
PART
TCET1111
TCET1111G
TCET1112
TCET1112G
TCET1113
TCET1113G
TCET1114
TCET1114G
TCET1110
TCET1110G
TCET1115
TCET1115G
TCET1116
TCET1116G
TCET1117
TCET1117G
TCET1118
TCET1118G
TCET1119
TCET1119G
TCET1111
TCET1111G
TCET1112
TCET1112G
TCET1113
TCET1113G
TCET1114
TCET1114G
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
13
22
34
56
50
50
100
80
130
200
40
63
100
160
TYP.
30
45
70
90
MAX.
600
150
300
160
260
400
80
125
200
320
UNIT
%
%
%
%
%
%
%
%
%
%
%
%
%
%
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4
For technical questions, contact: [e-mail]
Document Number: 83546
Rev. 1.8, 21-Nov-07