TCET1110_07 Datasheet, PDF (5/11 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated

TCET1110/TCET1110G
Optocoupler, Phototransistor Output, _{Vishay Semiconductors}
High Temperature, 110 °C Rated
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
OUTPUT
I_F
130
mA
Power dissipation
COUPLER
P_diss
265
mW
Rated impulse voltage
Safety temperature
V_IOTM
T_si
8
kV
150
°C
Note
According to DIN EN 60747-5-2 (VDE0884)/ DIN EN 60747-5-5 pending (see figure 1). This optocoupler is suitable for safe electrical isolation
only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
100 %, t_test = 1 s
Partial discharge test voltage -
lot test (sample test)
t_Tr = 60 s, t_test = 10 s,
(see figure 2)
Insulation resistance
V_IO = 500 V
V_IO = 500 V, T_amb = 100 °C
V_IO = 500 V, T_amb = 150 °C
(construction test only)
SYMBOL
V_pd
V_IOTM
V_pd
R_IO
R_IO
R_IO
MIN.
1.6
8
1.3
10¹²
10¹¹
10⁹
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
300
250
Phototransistor
P_si (mW)
200
150
100
50
0
0
94 9182
IR-Diode
I_si (mA)
25 50 75 100 125 150
T_si - Safety Temperature (°C)
Fig. 1 - Derating Diagram
V_IOTM
V_Pd
V_IOWM
V_IORM
t₁, t₂ = 1 to 10 s
t₃, t₄ = 1 s
t_test = 10 s
t_stres = 12 s
0
13930
t₁
t_Tr = 60 s
t₃ t_test t₄
t₂ t _stres
t
Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN
60747-5-2 (VDE 0884)/DIN EN 60747-; IEC60747
Document Number: 83546
Rev. 1.8, 21-Nov-07
For technical questions, contact: [e-mail]
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