Si4816BDY Datasheet, PDF (7/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4816BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL-2
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
T_J = 150_C
10
0.03
T_J = 25_C
0.02
0.01
I_D = 9.5 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Reverse Current vs. Junction Temperature
10
1
0.1
0.01
V_DS = 30 V
V_DS = 24 V
0.001
0.0001
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
0.00001
0
25
50
75
100 125 150
0
0.001
0.01
0.1
1
10
T_J − Temperature (_C)
Safe Operating Area
100
*r_DS(on) Limited
I_DM Limited
Time (sec)
10
I_D(on)
1 ^Limited
1 ms
10 ms
100 ms
0.1
T_C = 25_C
Single Pulse
1s
10 s
dc
BV_DSS Limited
0.01
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Document Number: 73026
S-41510—Rev. A, 09-Aug-04
www.vishay.com
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