Si4816BDY Datasheet, PDF (2/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816BDY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = 20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 6.8 A
V_GS = 10 V, I_D = 11.4 A
V_GS = 4.5 V, I_D = 6.0 A
V_GS = 4.5 V, I_D = 9.5 A
V_DS = 15 V, I_D = 6.8 A
V_DS = 15 V, I_D = 11.4 A
I_S = 1 A, V_GS = 0 V
I_S = 1 A, V_GS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Channel-1
V_DS = 15 V, V_GS = 5 V, I_D = 6.8 A
Channel-2
V_DS = 15 V, V_GS = 5 V, I_D = −11.4 A
Channel-1
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
Channel-2
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 1.3 A, di/dt = 100 A/ms
I_F = 2.2 A, di/dt = 100 mA/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Min
1.0
1.0
20
30
1.5
0.9
Typ^a Max Unit
3.0
V
3.0
100
nA
100
1
100
mA
15
2000
A
0.0155 0.0185
0.0093 0.0115
W
0.0185 0.0225
0.013 0.016
30
S
31
0.73
1.1
V
0.47
0.5
7.8
10
11.6
18
2.9
nC
4.8
2.3
3.7
3.0
4.5
W
1.8
2.7
11
17
13
20
9
15
9
15
24
40
ns
31
50
9
15
11
17
20
35
25
40
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2
Document Number: 73026
S-41510—Rev. A, 09-Aug-04