|
Si4816BDY Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
|
◁ |
Si4816BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL-1
Gate Charge
6
VDS = 15 V
5
ID = 6.8 A
4
3
2
1
0
0
2
4
6
8
10
Qg â Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 6.8 A
1.4
1.2
1.0
0.8
0.6
â50 â25 0
25 50 75 100 125 150
TJ â Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
TJ = 150_C
10
TJ = 25_C
0.04
0.03
ID = 6.8 A
0.02
0.01
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.2
â0.0
ID = 250 mA
â0.2
â0.4
â0.6
â0.8
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
www.vishay.com
4
0.00
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (sec)
Document Number: 73026
S-41510âRev. A, 09-Aug-04
|
▷ |