Si4816BDY Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4816BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 1.0 A
I_F = 1.0 A, T_J = 125_C
V_r = 30 V
V_r = 30 V, T_J = 100_C
V_r = −30 V, T_J = 125_C
V_r = 10 V
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL-1
40
35
30
25
20
15
10
5
0
0
0.05
Output Characteristics
V_GS = 10 thru 4 V
3V
2V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
0.00
0
5 10 15 20 25 30 35 40
I_D − Drain Current (A)
Document Number: 73026
S-41510—Rev. A, 09-Aug-04
Transfer Characteristics
40
35
30
25
20
15
T_C = 125_C
10
5
25_C
−55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS − Gate-to-Source Voltage (V)
1200
Capacitance
1000
C_iss
800
600
400
200
0
0
C_rss
C_oss
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
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