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| SUD50N10-18P Datasheet, PDF (7/8 Pages) Vishay Siliconix – N-Channel 100-V (D-S), 175 °C MOSFET | |||
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New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
SUD50N10-18P
Vishay Siliconix
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
10-3
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 95 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69846.
Document Number: 69846
S-81956-Rev. B, 25-Aug-08
www.vishay.com
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