SUD50N10-18P Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 100-V (D-S), 175 °C MOSFET

SUD50N10-18P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
I_D = 20 A
2.5
I_D = 15 A
15
V_DS = 50 V
2.0
V_DS = 80 V
10
1.5
V_GS = 10 V
5
1.0
0
0
100
10
1
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
300
240
180
120
T_A = 25 °C
60
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
0.5
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.7
0.2
- 0.3
- 0.8
I_D = 5 mA
- 1.3
- 1.8
I_D = 250 µA
- 2.3
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
600
500
400
300
200
T_C = 25 °C
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Case
Document Number: 69846
S-81956-Rev. B, 25-Aug-08