SUD50N10-18P Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel 100-V (D-S), 175 °C MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
1000
SUD50N10-18P
Vishay Siliconix
100 _Limited
by R_DS(on)*
10 µs, 100 µs
10
1 ms
1
10 ms
100 ms
0.1 T_A = 25 °C
Single Pulse
1s
10 s
100 s, DC
0.01
0.1
1.0
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
10
8
6
4
2
0
0
25 50 75 100 125 150 175
T_A - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
100
Limited
by R_DS(on)*
10
1
10 µs,
100 µs
1 ms
10 ms
100 ms, DC
0.1 T_C = 25 °C
Single Pulse
0.01
0.1
1.0
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
60
50
Package Limited
40
30
20
10
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current Derating**, Junction-to-Case
** The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69846
S-81956-Rev. B, 25-Aug-08
www.vishay.com
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