SUD50N10-18P Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 100-V (D-S), 175 °C MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.0
V_GS = 10 thru 8 V
80
1.6
V_GS = 7 V
60
1.2
SUD50N10-18P
Vishay Siliconix
40
20
0
0
75
60
V_GS = 6 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = - 55 °C
45 _{TC = 25 °C}
30
T_C = 125 °C
15
0.8
0.4
0.0
0
0.036
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.027
0.018
V_GS = 10 V
0.009
0
0
10
20
30
40
50
I_D - Drain Current (A)
Transconductance
0.10
I_D = 15 A
0.08
0.06
0.000
0
3500
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
2800
C_iss
2100
0.04
T_A = 150 °C
0.02
T_A = 25 °C
0.00
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 69846
S-81956-Rev. B, 25-Aug-08
1400
700
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
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