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IRFR010 Datasheet, PDF (7/9 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFET
IRFR010, SiHFR010
Vishay Siliconix
Fig. 12c - Typical Transconductance vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Document Number: 91420
S10-1510-Rev. A, 19-Jul-10
www.vishay.com
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