IRFR010 Datasheet, PDF (5/9 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFET

Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFR010, SiHFR010
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- _VDD
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
Fig. 10 - Breakdown Voltage vs. Temperature
Document Number: 91420
S10-1510-Rev. A, 19-Jul-10
www.vishay.com
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