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IRFR010 Datasheet, PDF (2/9 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFET
◁
IRFR010, SiHFR010
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
MIN.
-
-
-
TYP.
-
1.7
-
MAX.
110
-
5.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 50 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.6 Ab
VDS  50 V, ID = 3.6 A
50
-
-
V
2.0
-
4.0
V
-
-
± 500 nA
-
-
250
μA
-
-
1000
-
0.16 0.20

2.1
3.1
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 10
-
250
-
-
150
-
pF
-
29
-
-
6.7
10
VGS = 10 V
ID = 7.3 A, VDS = 40 V,
see fig. 6 and 13b
-
1.8
2.6
nC
-
3.2
4.8
-
11
17
VDD = 25 V, ID = 7.3 A,
Rg = 24 , RD = 3.3 , see fig. 10b
-
33
50
ns
-
12
18
-
23
35
Between lead,
6 mm (0.25") from
package and center of
die contactc
D
G
S
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
8.2
A
-
-
33
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8.2 A, VGS = 0 Vb
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
41
86
190
ns
TJ = 25 °C, IF = 7.3 A, dI/dt = 100 A/μsb
0.15
0.33
0.78
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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Document Number: 91420
S10-1510-Rev. A, 19-Jul-10
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