IRFR010 Datasheet, PDF (6/9 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFET

IRFR010, SiHFR010
Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V_DS
Vary t_p to obtain
required I_AS
R_G
10 V
t_p
L
D.U.T
I_AS
0.01 Ω
+
- ^{V DD}
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
V_DS
t_p
V_DD
I_AS
Fig. 12b - Unclamped Inductive Waveforms
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6
Document Number: 91420
S10-1510-Rev. A, 19-Jul-10