VS-VSKT152 Datasheet, PDF (6/9 Pages) Vishay Siliconix – Industrial standard package

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1000
100
VS-VSKT152/04PbF
Vishay Semiconductors
1
Steady State Value
RthJC = 0.182 K/W
(DC Operation)
0.1
10
Tj = 25˚C
Tj = 125˚C
VSKT152
Per Junction
1
0.5
1
1.5
2
2.5
Instantaneous On-state Voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
0.01
VSKT152
0.001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance Z_thJC Characteristics
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
10
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
1
VGD
IGD
0.1
0.001
0.01
(4) (3) (2) (1)
VSKT152
Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 12 - Gate Characteristics
1000
Revision: 11-Apr-14
6
Document Number: 94514
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