VS-VSKT152 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Industrial standard package

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VS-VSKT152/04PbF
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC gate
voltage to trigger
Maximum required DC gate
current to trigger
Maximum gate voltage 
that will not trigger
Maximum gate current 
that will not trigger
Maximum rate of rise of 
turned-on current
SYMBOL
P_GM
P_G(AV)
I_GM
- V_GT
TEST CONDITIONS
t_p  5 ms, T_J = T_J maximum
f = 50 Hz, T_J = T_J maximum
t_p  5 ms, T_J = T_J maximum
T_J = - 40 °C
V_GT
T_J = 25 °C
T_J = T_J maximum
T_J = - 40 °C
I_GT
T_J = 25 °C
T_J = T_J maximum
Anode supply = 6 V, 
resistive load; R_a = 1 
V_GD
T_J = T_J maximum, rated V_DRM applied
I_GD
dI/dt
T_J = T_J maximum, I_TM = 400 A rated V_DRM applied
VALUES
12
3
3
10
4
2.5
1.7
270
150
80
0.3
10
300
UNITS
W
A
V
mA
V
mA
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage 
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
T_J
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface smooth, flat and greased
Mounting
torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound. 
Lubricated threads.
Case style
VALUES
- 40 to 125
- 40 to 150
0.18
0.05
UNITS
°C
K/W
4 to 6
Nm
200
g
7.1
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT T_J MAXIMUM
180° 120° 90°
60°
30°
RECTANGULAR CONDUCTION
AT T_J MAXIMUM
180° 120°
90°
60°
30°
VSKT152/04PbF 0.007 0.010 0.013 0.016 0.017 0.009 0.012 0.014 0.016 0.017
Note
• Table shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC


UNITS
K/W
Revision: 11-Apr-14
3
Document Number: 94514
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