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VS-VSKT152 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Industrial standard package | |||
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www.vishay.com
130
VSKT152
RthJC (DC) = 0.182 K/W
120
110
Conduction Angle
100
90
80
0
30Ë
60Ë
90Ë
120Ë
180Ë
20 40 60 80 100 120 140 160
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
VSKT152
120
RthJC (DC) = 0.182 K/W
110
100
Conduction Period
90
30Ë
60Ë
80
90Ë
70
120Ë
180Ë
DC
60
0 50 100 150 200 250
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
220
180Ë
200 120Ë
180
90Ë
160
60Ë
30Ë
140
120 RMS Limit
100
80
60
Conduction Angle
40
VSKT152
20
Tj = 125ËC
0
0 20 40 60 80 100 120 140 160
Average On-state Current (A)
Fig. 3 - Forward Power Loss Characteristics
VS-VSKT152/04PbF
Vishay Semiconductors
300
DC
180Ë
250 120Ë
90Ë
200 60Ë
30Ë
150 RMS Limit
100
50
0
0
Conduction Period
VSKT152
Tj = 125ËC
50 100 150 200 250
Average On-state Current (A)
Fig. 4 - Forward Power Loss Characteristics
3600
3400
3200
3000
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125ËC
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2800
2600
2400
2200
2000
1800
VSKT152
Per Junction
1600
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
4000 Of Conduction May Not Be Maintained.
Initial Tj = 125ËC
3500
No Voltage Reapplied
Rated Vrrm Reapplied
3000
2500
2000 VSKT152
Per Junction
1500
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
4
Document Number: 94514
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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