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VS-VSKT152 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Industrial standard package
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130
VSKT152
RthJC (DC) = 0.182 K/W
120
110
Conduction Angle
100
90
80
0
30˚
60˚
90˚
120˚
180˚
20 40 60 80 100 120 140 160
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
VSKT152
120
RthJC (DC) = 0.182 K/W
110
100
Conduction Period
90
30˚
60˚
80
90˚
70
120˚
180˚
DC
60
0 50 100 150 200 250
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
220
180˚
200 120˚
180
90˚
160
60˚
30˚
140
120 RMS Limit
100
80
60
Conduction Angle
40
VSKT152
20
Tj = 125˚C
0
0 20 40 60 80 100 120 140 160
Average On-state Current (A)
Fig. 3 - Forward Power Loss Characteristics
VS-VSKT152/04PbF
Vishay Semiconductors
300
DC
180˚
250 120˚
90˚
200 60˚
30˚
150 RMS Limit
100
50
0
0
Conduction Period
VSKT152
Tj = 125˚C
50 100 150 200 250
Average On-state Current (A)
Fig. 4 - Forward Power Loss Characteristics
3600
3400
3200
3000
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2800
2600
2400
2200
2000
1800
VSKT152
Per Junction
1600
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
4000 Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
3500
No Voltage Reapplied
Rated Vrrm Reapplied
3000
2500
2000 VSKT152
Per Junction
1500
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
4
Document Number: 94514
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