SIA931DJ Datasheet, PDF (6/9 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

SiA931DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P_DM
Single Pulse
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 110 °C/W
3. T_JM - T_A = P_DMZ_thJA ^(t)
4. Surface Mounted
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62859.
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For technical questions, contact: [e-mail]
Document Number: 62859
6
S13-1163-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000