SIA931DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

SiA931DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.200
10
T_J = 150 °C
T_J = 25 °C
1
0.160
0.120
0.080
0.040
I_D = 3 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.80
1.70
1.60
1.50
1.40
I_D = 250 μA
1.30
1.20
1.10
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
Pulse (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 μs
1
1 ms
10 ms
0.1
T_A = 25 °C
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 62859
4
S13-1163-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000