SIA931DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

SiA931DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
V_GS = 10 V thru 6 V
25
20
V_GS = 5 V
15
V_GS = 4 V
10
5
0
0.0
V_GS = 3 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
4
2
0
0.0
T_C = 25 °C
T_C = - 55 °C
T_C = 125 °C
1.0
2.0
3.0
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.2000
0.1600
0.1200
0.0800
0.0400
V_GS = 4.5 V
V_GS = 6 V
V_GS = 10 V
0.0000
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
600
500
C_iss
400
300
200
100
C_oss
0
0
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
8
I_D = 4 A
V_DS = 7.5 V
1.6
I_D = 3 A
1.4
V_GS = 10 V, 6 V
6
1.2
V_DS = 15 V
4
V_DS = 24 V
1.0
V_GS = 4.5 V
2
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62859
For technical questions, contact: [e-mail]
www.vishay.com
S13-1163-Rev. A, 13-May-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000