SI9958DY Datasheet, PDF (6/6 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PĆCHANNEL
Source-Drain Diode Forward Voltage
10
T_J = 150_C
T_J = 25_C
1
0
0.5
1.0
1.5
2.0
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
1.0
I_D = 250 µA
0.5
On-Resistance vs. Gate-to-Source Voltage
0.32
0.28
0.24
0.20
0.16
I_D = 3.5 A
0.12
0.08
0.04
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
25
20
15
0.0
10
–0.5
5
–1
–50
0
50
100
150
T_J – Temperature (_C)
0
10^–2
10^–1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
10^–3
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6
Single Pulse
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 70141
S-01025—Rev. J, 22-May-00