SI9958DY Datasheet, PDF (5/6 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
V_GS = 10, 9, 8, 7, 6, 5 V
8
4V
8
6
6
4
2
0
0
0.32
3V
2V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
2
0
0
2000
PĆCHANNEL
Transfer Characteristics
T_C = 125_C
25_C
–55_C
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.24
1500
0.16
0.08
V_GS = 4.5 V
V_GS = 6 V
V_GS = 10 V
0
0
2
4
6
8
10
I_D – Drain Current (A)
10
V_DS = 10 V
I_D = 3.5 A
8
Gate Charge
6
4
2
0
0
2
4
6
8
10 12 14
Q_g – Total Gate Charge (nC)
Document Number: 70141
S-01025—Rev. J, 22-May-00
1000
C_iss
500
C_oss
0
C_rss
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 10 V
I_D = 3.5 A
1.2
1.0
0.8
0.6
–50
0
50
100
150
T_J – Junction Temperature (_C)
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