SI9958DY Datasheet, PDF (3/6 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 10, 9, 8, 7, 6 V
16
15
5V
12
10
8
5
0
0
0.20
4V
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
0
0
1600
NĆCHANNEL
Transfer Characteristics
T_C = 125_C
25_C
–55_C
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.16
0.12
0.08
0.04
V_GS = 4.5 V
V_GS = 6 V
V_GS = 10 V
0
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
10
V_DS = 10 V
8 ^ID ^{= 3.5 A}
6
4
2
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
Document Number: 70141
S-01025—Rev. J, 22-May-00
1200
C_oss
800
C_iss
400
C_rss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 3.5 A
1.4
1.2
1.0
0.8
0.6
–50
0
50
100
150
T_J – Junction Temperature (_C)
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