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SI9958DY Datasheet, PDF (2/6 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET
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Si9958DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
VDS = 10 V, VGS = 0 V, TJ = 70_C
VDS = –10 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 10 V
VDS v –5 V, VGS = –10 V
VDS w 5 V, VGS = 4.5 V
VDS v –5 V, VGS = –4.5 V
VGS = 10 V, ID = 3.5 A
VGS = –10 V, ID = 3.5 A
VGS = 6 V, ID = 3 A
VGS = – 6 V, ID = 3 A
VGS = 4.5 V, ID = 2 A
VGS = –4.5 V, ID = 2 A
VDS = 15 V, ID = 3.5 A
VDS = –15 V, ID = –3.5 A
IS = 1.7 A, VGS = 0 V
IS = –1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 10 V, ID = 3.5 A
Qgs
P-Channel
VDS = –10 V, VGS = –10 V, ID = –3.5 A
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
IF = 3.5 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch 1.0
P-Ch –1.0
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
14
P-Ch –14
N-Ch 3.5
P-Ch –2.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
"100 nA
1
–1
mA
5
–5
A
0.10
0.10
0.12
W
0.12
0.15
0.19
5.6
S
4.0
0.9
1.2
V
–0.9
–1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9
30
13
30
1.0
nC
2.0
3.1
5.4
5
10
21
40
12
25
12
25
17
30
ns
12
30
9
20
11
20
60
100
50
100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70141
S-01025—Rev. J, 22-May-00
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