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SI9939DY Datasheet, PDF (6/6 Pages) Vishay Siliconix – Complimentary 30-V (D-S) MOSFET | |||
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Si9939DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PÄCHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.5
10
TJ = 150_C
TJ = 25_C
0.4
0.3
ID = 3.5 A
0.2
0.1
1
0.2 0.4
0.6
0.8
1.0
1.2
1.4
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0.8
0
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Single Pulse Power
40
0.6
32
0.4
ID = 250 µA
24
0.2
16
0.0
8
â0.2
â0.4
â50
0
50
100
150
TJ â Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
www.vishay.com S FaxBack 408-970-5600
6
10â2
10â1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Document Number: 70146
S-00652âRev. G, 27-Mar-00
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