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SI9939DY Datasheet, PDF (2/6 Pages) Vishay Siliconix – Complimentary 30-V (D-S) MOSFET
Si9939DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V
VDS = 15 V, VGS = 0 V, TJ = 70_C
VDS = –15 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 10 V
VDS v –5 V, VGS = –10 V
VDS w 5 V, VGS = 4.5 V
VDS v –5 V, VGS = –4.5 V
VGS = 10 V, ID = 3.5 A
VGS = –10 V, ID = 3.5 A
VGS = 6 V, ID = 3 A
VGS = – 6 V, ID = 3 A
VGS = 4.5 V, ID = 2.5 A
VGS = –4.5 V, ID = 2 A
VDS = 15 V, ID = 3.5 A
VDS = –15 V, ID = –3.5 A
IS = 1.7 A, VGS = 0 V
IS = –1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 10 V, ID = 3.5 A
Qgs
P-Channel
VDS = –10 V, VGS = –10 V
ID = –3.5 A
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
IF = 3.5 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
1.0
P-Ch –1.0
N-Ch
P-Ch
N-Ch
P-Ch
V
"100 nA
1
–1
mA
5
–5
N-Ch
20
P-Ch –20
A
N-Ch
3.5
P-Ch –3.5
N-Ch
0.04
0.05
P-Ch
0.074 0.10
N-Ch
P-Ch
0.045 0.07
W
0.090 0.12
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.054 0.08
0.115 0.16
9
S
6
0.75
1.2
V
–0.75 –1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14
35
14.5
35
1.9
nC
2.7
2.8
3.5
10
30
11
30
10
40
11
40
26
50
ns
30
50
10
50
12
50
60
120
40
100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70146
S-00652—Rev. G, 27-Mar-00