SI9939DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – Complimentary 30-V (D-S) MOSFET

Si9939DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.4
0.3
T_J = 25_C
0.2
0.1
I_D = 3.5 A
1
0
0.4
0.8
1.2
1.6
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
40
0.2
32
I_D = 250 mA
–0.0
24
–0.2
16
–0.4
8
–0.6
–0.8
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
4
Document Number: 70146
S-00652—Rev. G, 27-Mar-00