SI9939DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – Complimentary 30-V (D-S) MOSFET

Si9939DY
Vishay Siliconix
Complimentary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
30
P-Channel
–30
r_DS(on) (W)
0.05 @ V_GS = 10 V
0.07 @ V_GS = 6 V
0.08 @ V_GS = 4.5 V
0.10 @ V_GS = –10 V
0.12 @ V_GS = –6V
0.16 @ V_GS = –4.5 V
I_D (A)
"3.5
"3
"2.5
"3.5
"3
"2.5
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁ D₁
G₁
S₁
N-Channel MOSFET
S₂
G₂
D₂ D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
–30
"20
"20
"3.5
"3.5
"2.8
"2.8
"20
"20
1.7
–1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
Symbol
R_thJA
N- or P- Channel
62.5
Unit
_C/W
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