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| SI8800EDB_11 Datasheet, PDF (6/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET | |||
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Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
PDM
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 185 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
PDM
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 330 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
www.vishay.com
Document Number: 66700
6
S11-1145-Rev. B, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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