SI8800EDB_11 Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

Si8800EDB
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
V_DS
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS , I_D = 250 µA
V_DS = 0 V, V_GS = ± 4.5 V
V_DS = 0 V, V_GS = ± 8 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55 °C
V_DS 5 V, V_GS = 4.5 V
V_GS 4.5 V, I_D = 1 A
V_GS 2.5 V, I_D = 1 A
V_GS 1.8 V, I_D = 1 A
V_GS 1.5 V, I_D = 0.5 A
V_DS = 10 V, I_D = 1 A
Dynamic^b
Total Gate Charge
Q_g
V_DS = 10 V, V_GS = 8 V, I_D = 1 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 1 A
f = 1 MHz
V_DD = 10 V, R_L = 10 
I_D  1 A, V_GEN = 4.5 V, R_g = 1 
V_DD = 10 V, R_L = 10 
I_D  1 A, V_GEN = 8 V, R_g = 1 
T_C = 25 °C
I_S = 1 A, V_GS 0 V
I_F = 1 A, dI/dt = 100 A/µs, T_J = 25 °C
Min.
20
0.4
10
Typ. Max. Unit
18
- 2.3
0.066
0.072
0.082
0.095
10
1
± 0.5
±6
1
10
0.080
0.090
0.105
0.150
V
mV/°C
V
µA
A

S
5.5
8.3
3.2
5
nC
0.42
0.5
1
k
65
130
85
170
900 1800
350
700
ns
25
50
40
80
1100 2200
350
700
0.7
A
15
1
1.5
V
13
25
ns
5
10
nC
8
ns
5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 66700
2
S11-1145-Rev. B, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000