SI8800EDB_11 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.5
10
1.4
V_GS = 4.5 V, V_GS = 2.5 V, V _GS = 1.8 V; I_D = 1 A
1.3
1.2
1.1
V_GS = 1.5 V; I_D = 0.5 A
1.0
T_J = 150 °C
T_J = 25 °C
1
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.14
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.7
0.12
0.10
I_D = 1.5 A; T_J = 125 °C
0.6
0.5
0.08
I_D = 0.5 A; T_J = 125 °C
I_D = 1.5 A; T_J = 25 °C
0.4
0.06
I_D = 0.5 A; T_J = 25 °C
0.3
I_D = 250 μA
0.04
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
14
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
12
10
8
6
4
2
0
0.001 0.01 0.1
1
10
100
1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
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Document Number: 66700
4
S11-1145-Rev. B, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000